052-6402 rev a 8-2012 APT85GR120B2_l symbol parameter ratings unit v ces collector emitter voltage 1200 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 170 a i c2 continuous collector current @ t c = 100c 85 i cm pulsed collector current 1 340 scwt short circuit withstand time: v ce = 600v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 962 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) 1200 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) 3.5 5.0 6.5 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 85a, t j = 25c) 2.5 3.2 collector-emitter on voltage (v ge = 15v, i c = 85a, t j = 125c) 3.3 collector-emitter on voltage (v ge = 15v, i c = 170a, t j = 25c) 3.5 i ces collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 10 1000 a collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 100 i ges gate-emitter leakage current (v ge = 20v) 250 na ultra fast npt - igbt ? the ultra fast npt - igbt ? is a new generation of high voltage power igbts. using non-punch-through technology, the ultra fast npt-igbt ? offers superior ruggedness and ultrafast switching speed. features low saturation voltage low tail current rohs compliant short circuit withstand rated high frequency switching ultra low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). APT85GR120B2 apt85gr120l 1200v, 85a, v ce(on) = 2.5v typical downloaded from: http:///
APT85GR120B2_l 052-6402 rev a 8-2012 thermal and mechanical characteristics dynamic characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) .13 c/w r ja junction to ambient thermal resistance 40 w t package weight b2 .22 oz 6g l .36 oz 10 g 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 8400 pf c oes output capacitance 725 c res reverse transfer capacitance 190 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 600v i c = 85a 7.5 v q g 3 total gate charge 490 660 nc q ge gate-emitter charge 60 85 q gc gate- collector charge 230 320 t d(on) turn-on delay time inductive switching (25c) v cc = 600v v ge = 15v i c = 85a r g = 4.3 4 t j = +25c 43 ns t r current rise time 70 t d(off) turn-off delay time 300 t f current fall time 85 e on2 5 turn-on switching energy 6000 9000 j e off 6 turn-off switching energy 3800 5700 t d(on) turn-on delay time inductive switching (125c) v cc = 600v v ge = 15v i c = 85a r g = 4.3 4 t j = +125c 43 ns t r current rise time 70 t d(off) turn-off delay time 350 t f current fall time 95 e on2 5 turn-on switching energy 7800 11,700 j e off 6 turn-off switching energy 4900 7350 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 10 -4 10 -3 10 -2 0.1 1 10 -5 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
052-6402 rev a 8-2012 APT85GR120B2_l typical performance curves 0 50 100 150 200 250 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 1 2 3 4 5 6 6 8 10 12 14 16 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 0 4 8 12 16 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 42.5a i c = 85a i c = 170a i c = 85a i c = 170a 13v 15v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 3, saturation voltage characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 4, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 6, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 7, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 9, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 8, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 6.5v 7v i c = 42.5a 8.0v 9.0v 7.5v 10v i c (a) figure 2, max frequency vs current (t case = 75c) t j = 150c 0 20 40 60 80 100 120 20 40 50 80 100 120 140 160 frequency (khz) downloaded from: http:///
APT85GR120B2_l 052-6402 rev a 8-2012 typical performance curves 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 i c = 85a t j = 25c v ce = 960v v ce = 600v v ce = 240v gate charge (nc) figure 11, gate charge v ge , gate-to-emitter voltage (v) 0 20 40 60 80 100 120 140 160 180 10 20 50 70 90 110 130 150 170 0 50 100 150 200 250 300 350 400 450 20 40 60 80 100 120 140 160 180 3000 4000 5000 6000 7000 8000 0 25 50 75 100 125 150 0 2000 4000 6000 8000 10000 12000 14000 16000 0 10 20 30 40 50 0 5000 10000 15000 20000 0 40 80 120 160 200 v ce = 600v, v ge =15v, r g = 4.3 t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 12, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 13, turn-off time vs collector current switching time (ns) r g , gate resistance ( ) figure 15, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 14, energy loss vs collector current switching energy loss ( j) t j , junction temperature (c) figure 16, swiitching energy vs junction temperature switching energy losses ( j) t r t d(off) t f v ce = 600v, v ge =15v, r g = 4.3 t j = 25c t j = 125c v ce = 600v, v ge =15v, r g = 4.3 t j = 25c t j = 125c e on2 e off e on2 e off v ce = 600v, v ge =15v, i c = 85a t j = 125c switching energy loss ( j) e off e on2 v ce = 600v, v ge =15v, r g = 4.3 i c = 85a 1.0e ? 10 1.0e ? 9 1.0e ? 8 2.0e ? 8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (f) 0.1 1 10 100 500 1 10 100 1000 4000 v ce , collector-to-emitter voltage figure 17, minimum switching safe operating area i c , collector current (a) 1ms 100 s 10ms downloaded from: http:///
052-6402 rev a 8-2012 APT85GR120B2_l 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) gate these dimensions are equal to the to-247 without the mounting hole. 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) collecto emitte gate dimensions in millimeters and (inches) 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) collectoemitte collecto collecto t-max tm (b2) package outline to-264 (l) package outline downloaded from: http:///
APT85GR120B2_l 052-6402 rev a 8-2012 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprieta ry and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modi ? ed, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an of ? cer of microsemi.microsemi reserves the right to change the con ? guration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to ? tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speci ? cations believed to be reliable but are not veri ? ed and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers ? nal application. user or customer shall not rely on any data and performance speci ? cations or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. mi- crosemi speci ? cally disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost pro ? t. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp downloaded from: http:///
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